AO4578 30v n-channel mosfet general description p roduct summary v ds i d (at v gs =10v) 2 0a r ds(on) (at v gs =10v) < 5.7m w r ds(on) (at v gs =4.5v) < 9m w application 100% uis tested 100% r g tested symbol v ds v ? latest trench power alphamos ( mos lv) technology ? very low r ds(on) at 4.5v v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industrial 30v v 20 gate-source voltage drain-source voltage 30 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted soic-8 t op view bottom view d d d d s s s g g d s v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q j l 100ns 3 6 v avalanche current c 40 a a valanche energy l=0.01mh c 8 m j units parameter typ max c/w r q j a 31 4 0 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 59 continuous drain current a i d 20 1 5 120 t a =70c p ulsed drain current c maximum junction-to-ambient a v 20 gate-source voltage t a =25c c thermal characteristics power dissipation b p d t a =25c w 3 .1 2 t a =70c j unction and storage temperature range -55 to 150 rev.1.0: august 2013 www.aosmd.com page 1 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m free datasheet http:///
AO4578 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.2 v 4.7 5.7 t j =125c 6.5 7.8 7.2 9 m w g fs 62 s v sd 0.7 1 v i s 4.2 a c iss 1128 pf c oss 435 pf c rss 59 pf r g 0.7 1.4 2.1 w q g (10v) 16.2 25 nc q g (4.5v) 7.4 15 nc q gs 4.3 nc q gd 2.3 nc t d(on) 5.5 ns t r 3 ns t 22.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, i d =20a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage turn-on rise time turn-off delaytime maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, r l =0.75 w , r =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge t d(off) 22.5 ns t f 3 ns t rr 13.3 ns q rr 25 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time b ody diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime i f =20a, di/dt=500a/ m s turn-off fall time r gen =3 w a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev.1.0: august 2013 www.aosmd.com page 2 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m free datasheet http:///
AO4578 typical electrical and thermal characteristics 0 2 0 40 60 80 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 1 0 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on- resistance vs. junction temperature (note e) v g s =4.5v i d =20a v g s =10v i d =20a 25 c 125 c v d s =5v v g s =4.5v v g s =10v 0 2 0 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v g s =3v 3.5v 6 v 10v 4.5v voltage (note e) 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 3 6 9 1 2 15 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = 20a 25 c 125 c rev.1.0: august 2013 www.aosmd.com page 3 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m free datasheet http:///
AO4578 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 3 00 600 900 1200 1500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =15v i d =20a 1 1 0 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t a = 25 c 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) 10 m s 10s 1ms dc r d s(on) limited t j( max) =150 c t a =25 c 100 m s idm limited v gs> or equal to 4.5v figure 9: maximum forward biased safe 10ms figure 10: single pulse power rating junction - to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0 .01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w rev.1.0: august 2013 www.aosmd.com page 4 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m free datasheet http:///
AO4578 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d io d e r eco very t est c ircu it & w a vefo rm s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev.1.0: august 2013 www.aosmd.com page 5 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m free datasheet http:///
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